| PART |
Description |
Maker |
| KP028J P0120008P |
1W GaAs Power FET (Pb-Free Type)
|
Eudyna Devices Inc
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| RJK03F6DNS-00-J5 |
30 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03E0DNS-00-J5 |
30 A, 30 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03E2DNS-00-J5 |
16 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| TIM1414-5-252 |
POWER GAAS FET
|
Toshiba Semiconductor
|
